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Ogawa, Shuichi*; Yoshigoe, Akitaka; Tang, J.*; Sekihata, Yuki*; Takakuwa, Yuji*
Japanese Journal of Applied Physics, 59(SM), p.SM0801_1 - SM0801_42, 2020/07
Times Cited Count:5 Percentile:31.64(Physics, Applied)In this paper, we review the study of the unified Si oxidation reaction model mediated by point defect generation, in which O dissociative adsorption occurs at dangling bonds of point defects (emitted Si atoms and vacancies) at the SiO/Si interface, and the point defect generation rate is given by a combination of oxidation-induced strain, thermal strain due to the difference in thermal expansion coefficient between Si and SiO, thermal excitation of Si emission rate, and heat of adsorption.